DMN66D0LT n-channel enhancement mode mosfet features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? small surface mount package ? esd protected gate, 1kv (hbm) ? lead free/rohs compliant (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-523 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte tin finish annealed over alloy 42 leadframe). ? terminal connections: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.002 grams (approximate) uc t new prod source equivalent circuit gate protection diode gate drain sot-523 top view g s d esd protected, 1kv top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage (note 1) continuous v gss 20 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 3) drain-source breakdown voltage bv dss 60 70 ? v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss ? ? 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss ? ? 5 a v gs = 20v, v ds = 0v on characteristics (note 3) gate threshold voltage v gs(th) 1.2 ? 2.0 v v ds = v gs , i d = 250 a v gs = 5.0v, i d = 0.115a static drain-source on-resistance @ t j = 25c @ t j = 125c r ds (on) ? 3.5 3.0 6 5 v gs = 10v, i d = 0.115a forward transconductance g fs 80 ? ? ms v ds = 10v, i d = 0.115a dynamic characteristics input capacitance c iss ? 23 ? pf output capacitance c oss ? 3.4 ? pf reverse transfer capacitance c rss ? 1.4 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz switching characteristics turn-on delay time t d(on) ? 10 ? ns turn-off delay time t d(off) ? 33 ? ns v dd = 30v, i d = 0.115a, r l = 150 , v gen = 10v , r gen = 25 notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0. 062 inch; pad layout as shown on diodes inc. suggested pad layou t document ap02001, which can be found on our website at http://www.diodes.com/ datasheets/ap02001.pdf. 2. no purposefully added lead. 3. short duration pulse test used to minimize self-heating effect. DMN66D0LT document number: ds31530 rev. 2 - 2 1 of 4 www.diodes.com september 2008 ? diodes incorporated
DMN66D0LT fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d 0.01 0.1 1 1234 0 0.1 0.2 0.3 0.4 0.5 0.6 5 t = -55c a t = 25c a t = 85c a t = 150c a v = 5v pulsed ds new product 0 0.5 1.0 1.5 2.0 2.5 fig. 3 on-resistance vs. drain current & gate voltage i , drain-source current (a) d r , static drain-source on-resistance ( ) ds(on) 1 2 3 4 5 6 7 8 9 0 0.1 0.2 0.3 0.4 0.5 0.6 v = 5v gs v = 10v gs fig. 6 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) t 1 10 100 0 5 10 15 20 25 30 35 40 c iss c oss c rss fig. 5 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 1.0 i = 250a d DMN66D0LT document number: ds31530 rev. 2 - 2 2 of 4 www.diodes.com september 2008 ? diodes incorporated
DMN66D0LT fig. 7 reverse drain current vs. source-drain voltage v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s 0.0001 0.001 0.01 0.1 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a new product ordering information (note 4) part number case packaging DMN66D0LT -7 sot-523 3000/tape & reel notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information mn1 ym mn1 = product type marking code ym = date code marking y = year ex: v = 2008 m = month ex: 9 = september date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions a m j l d b c h k g n sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 DMN66D0LT document number: ds31530 rev. 2 - 2 3 of 4 www.diodes.com september 2008 ? diodes incorporated d ? ? 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 ? all dimensions in mm
DMN66D0LT suggested pad layout DMN66D0LT document number: ds31530 rev. 2 - 2 4 of 4 www.diodes.com september 2008 ? diodes incorporated new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. x e y c z dimensions value (in mm) z 1.8 x 0.4 y 0.51 c 1.3 e 0.7
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